A bulk acoustic wave (BAW) device, comprising: first and second metal electrodes; a carrier substrate; and a Group-111 nitride epitaxial layer electrically coupled to said first and second electrodes, wherein said first electrode comprises at least two distinct portions with each of said portions between said carrier substrate and said epitaxial layer, said Group-111 nitride epitaxial layer not more than approximately 0.4 microns thick.
A bulk acoustic wave (BAW) device, comprising: first and second electrodes, said first electrode comprising at least two electrically isolated portions, said second electrode electrically connected to one of said at least two portions with a via; a Group-111 nitride layer electrically coupled to said first and second electrodes, wherein said Group-111 nitride layer is not more than approximately 0.4 microns thick; and a substrate, said first electrode adjacent to said substrate; wherein said first and second electrodes are electrically connected to different portions of a surface of said substrate opposite said Group-III nitride layer.