发明公开
- 专利标题: SOCKET CONTACT TECHNIQUES AND CONFIGURATIONS
- 专利标题(中): 套接字技术和配置
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申请号: EP14902347.5申请日: 2014-09-26
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公开(公告)号: EP3198688A1公开(公告)日: 2017-08-02
- 发明人: ATHREYA, Dhanya , CHAWLA, Gaurav , AYGUN, Kemal , HEPPNER, Joshua D. , NEKKANTY, Srikant , SMALLEY, Jeffory L. , CANNY, Sarah M. , GORDON, Glen P. , GARCIA, Michael
- 申请人: Intel Corporation
- 申请人地址: 2200 Mission College Boulevard Santa Clara, CA 95054 US
- 专利权人: Intel Corporation
- 当前专利权人: Intel Corporation
- 当前专利权人地址: 2200 Mission College Boulevard Santa Clara, CA 95054 US
- 代理机构: Rummler, Felix
- 国际公布: WO2016048352 20160331
- 主分类号: H01R33/76
- IPC分类号: H01R33/76 ; H01L23/32
摘要:
Embodiments of the present disclosure are directed towards socket contact techniques and configurations. In one embodiment, an apparatus may include a socket substrate having a first side and a second side disposed opposite to the first side, an opening formed through the socket substrate, an electrical contact disposed in the opening and configured to route electrical signals between the first side and the second side of the socket substrate, the electrical contact having a cantilever portion that extends beyond the first side, wherein the first side and surfaces of the socket substrate in the opening are plated with a metal. Other embodiments may be described and/or claimed.
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