- 专利标题： POLYCRYSTALLINE OXIDE THIN-FILM TRANSISTOR ARRAY SUBSTRATE AND PREPARATION METHOD THEREFOR
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申请号： EP15778180申请日： 2015-04-10
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公开(公告)号： EP3220414A4公开(公告)日： 2018-06-20
- 发明人: HU HEHE
- 申请人： BOE TECHNOLOGY GROUP CO LTD
- 专利权人： BOE TECHNOLOGY GROUP CO LTD
- 当前专利权人： BOE TECHNOLOGY GROUP CO LTD
- 优先权： CN201410640940 2014-11-13
- 主分类号： H01L29/786
- IPC分类号： H01L29/786 ; H01L21/02 ; H01L21/465 ; H01L27/12 ; H01L29/66
摘要：
This invention provides a polycrystalline oxide thin-film transistor (TFT) array substrate and a method of manufacturing the same. As the polycrystalline oxide thin film layer of the polycrystalline oxide TFT array substrate is formed by a two-step process according to the present invention, the ultra-high temperature annealing process required in the prior art is obviated, and the object of producing a polycrystalline oxide TFT array substrate by the existing manufacturing facilities of the amorphous oxide TFT array substrates is achieved without adding any special equipment or special operation, and it is easy to implement; meanwhile, the energy consumption is reduced as the high temperature annealing is no longer needed.
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