发明公开
- 专利标题： THIN CHANNEL REGION ON WIDE SUBFIN
- 专利标题（中）： 窄亚音频的窄通道区域
-
申请号： EP14909247.0申请日： 2014-12-23
-
公开(公告)号： EP3238267A1公开(公告)日： 2017-11-01
- 发明人: GARDNER, Sanaz K. , RACHMADY, Willy , METZ, Matthew V. , DEWEY, Gilbert , KAVALIEROS, Jack T. , MOHAPATRA, Chandra S. , MURTHY, Anand S. , RAHHAL-ORABI, Nadia , ZELICK, Nancy M. , GHANI, Tahir
- 申请人： Intel Corporation
- 申请人地址： 2200 Mission College Boulevard Santa Clara, CA 95054 US
- 专利权人： Intel Corporation
- 当前专利权人： Intel Corporation
- 当前专利权人地址： 2200 Mission College Boulevard Santa Clara, CA 95054 US
- 代理机构： 2SPL Patentanwälte PartG mbB
- 国际公布： WO2016105404 20160630
- 主分类号： H01L29/78
- IPC分类号： H01L29/78 ; H01L21/336
摘要：
An embodiment includes a device comprising: a fin structure including an upper portion and a lower portion, the upper portion having a bottom surface directly contacting an upper surface of the lower portion; wherein (a) the lower portion is included in a trench having an aspect ratio (depth to width) of at least 2:1; (b) the bottom surface has a bottom maximum width and the upper surface has an upper maximum width that is greater the bottom maximum width; (c) the bottom surface covers a middle portion of the upper surface but does not cover lateral portions of the upper surface; and (d) the upper portion includes an upper III-V material and the lower portion includes a lower III-V material different from the upper III-V material. Other embodiments are described herein.
信息查询
IPC分类:
