A method for easily removing a deposition residue from deposition space components of a deposition apparatus in which substrates are treated for applying at least one layer using one of CVD, PECVD, ALD, PVD and evaporation. In a deposition apparatus having a deposition space that is bounded by deposition space walls at least one deposition treatment is performed to apply a layer on a substrate within the deposition space. The deposition space walls are provided with a coating. The deposition space walls are cleaned with a selective wet-etching treatment. The composition of the deposition space wall coating is adapted to the composition of the deposition residue that is deposited on the deposition space walls during the deposition treatment and the liquid etching agent that is used during the selective wet etching treatment, such that the deposition residue is removed without affecting the deposition space walls.