发明公开
EP3271936A1 SPLIT GATE NON-VOLATILE MEMORY CELL WITH 3D FINFET STRUCTURE, AND METHOD OF MAKING SAME
审中-公开
具有3D FINFET结构的分裂栅非易失性存储器单元及其制造方法
- 专利标题： SPLIT GATE NON-VOLATILE MEMORY CELL WITH 3D FINFET STRUCTURE, AND METHOD OF MAKING SAME
- 专利标题（中）： 具有3D FINFET结构的分裂栅非易失性存储器单元及其制造方法
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申请号： EP16708579.4申请日： 2016-02-26
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公开(公告)号： EP3271936A1公开(公告)日： 2018-01-24
- 发明人: SU, Chien-Sheng , YANG, Jeng-Wei , WU, Man-Tang , TRAN, Hieu Van , DO, Nhan , CHEN, Chun-Ming
- 申请人： Silicon Storage Technology Inc.
- 申请人地址： 450 Holger Way San Jose, CA 95134 US
- 专利权人： Silicon Storage Technology Inc.
- 当前专利权人： Silicon Storage Technology Inc.
- 当前专利权人地址： 450 Holger Way San Jose, CA 95134 US
- 代理机构： Betten & Resch
- 优先权： US201562134489P 20150317; US201615050309 20160222
- 国际公布： WO2016148873 20160922
- 主分类号： H01L21/28
- IPC分类号： H01L21/28 ; H01L29/423 ; H01L29/66 ; H01L29/78 ; H01L29/788 ; H01L27/115
摘要：
A non-volatile memory cell including a semiconductor substrate having a fin shaped upper surface with a top surface and two side surfaces. Source and drain regions are formed in the fin shaped upper surface portion with a channel region there between. A conductive floating gate includes a first portion extending along a first portion of the top surface, and second and third portions extending along first portions of the two side surfaces, respectively. A conductive control gate includes a first portion extending along a second portion of the top surface, second and third portions extending along second portions of the two side surfaces respectively, a fourth portion extending up and over at least some of the floating gate first portion, and fifth and sixth portions extending out and over at least some of the floating gate second and third portions respectively.
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