本发明涉及一种存储器元件，其中可以使用该存储器元件的堆叠和存储器矩阵，用于操作存储器矩阵的方法以及用于确定存储器元件的布置中的逻辑操作的逻辑值的方法。 存储器元件至少具有第一稳定状态0和第二稳定状态1。 通过施加第一写入电压V0，该存储器元件可以被转换为高电阻状态0并且通过将第二写入电压V1施加到同样高电阻状态1中。 当读出电压VR的大小小于写入电压V0和V1时，存储元件显示不同的电阻值。 存储器元件在存储器矩阵中出现的寄生电流路径中用作高电阻电阻器，原则上不限于单极开关。 已经开发了一种方法，利用该方法可以将根据本发明的存储器元件的布置制成用于任意逻辑操作的门。

The invention relates to a memory element, a stack and a memory array in which this storage element is used, methods for operating the memory array and method of determining the truth value of a logical operation in an array of the memory elements. The storage element has at least a first stable state 0 and a second stable 1 state. By applying a first write voltage V ₀ at this memory element can be converted into the high impedance state 0 and by applying a second write voltage V ₁ in the high-impedance state also. 1 Upon application of a read voltage V _R which is smaller in magnitude than the write voltage V ₀ and V _1, the memory element exhibits different electrical resistance values. The storage element acts in the occurring in a memory array parasitic current paths as a high-value resistor without being in principle restricted to unipolar switching. We have developed a method by which an arrangement of the inventive storage elements can be made to a gate for random logic operations.