发明公开
EP3284102A1 MANUFACTURING OF FOREIGN OXIDE OF FOREIGN NITRIDE ON SEMICONDUCTOR
审中-公开
氮化物外延氧化物在半导体上的制造
- 专利标题： MANUFACTURING OF FOREIGN OXIDE OF FOREIGN NITRIDE ON SEMICONDUCTOR
- 专利标题（中）： 氮化物外延氧化物在半导体上的制造
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申请号： EP16707166.1申请日： 2016-02-17
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公开(公告)号： EP3284102A1公开(公告)日： 2018-02-21
- 发明人: KUZMIN, Mikhail , LAUKKANEN, Pekka , MUHAMMAD, Yasir , TUOMINEN, Marjukka , DAHL, Johnny , TUOMINEN, Veikko , MÄKELÄ, Jaakko , PUNKKINEN, Marko , KOKKO, Kalevi
- 申请人： Turun Yliopisto
- 申请人地址： Yliopistonmäki 20014 Turun yliopisto FI
- 专利权人： Turun Yliopisto
- 当前专利权人： Turun Yliopisto
- 当前专利权人地址： Yliopistonmäki 20014 Turun yliopisto FI
- 代理机构： Papula Oy
- 优先权： FI20155284 20150416
- 国际公布： WO2016166407 20161020
- 主分类号： H01L21/316
- IPC分类号： H01L21/316 ; H01L21/318
摘要：
A method for forming a foreign oxide or foreign nitride layer (6) on a substrate (1) of a semiconductor comprises providing a semiconductor substrate (1) having an oxidized or nitridized surface layer (3), supplying a foreign element (5) on the oxidized or nitridized surface layer; and keeping the oxidized or nitridized surface layer (3) at an elevated temperature so as to oxidize or nitridize at least partially the foreign element by the oxygen or nitrogen, respectively, initially present in the oxidized or nitridized surface layer (3).
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