发明公开
- 专利标题: POWER SEMICONDUCTOR MODULE AND ITS ATTACHMENT STRUCTURE
- 专利标题(中): 功率半导体模块及其附件结构
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申请号: EP17187208.8申请日: 2011-08-10
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公开(公告)号: EP3288075A1公开(公告)日: 2018-02-28
- 发明人: ASADE, Shinsuke , WATANABE, Yuetsu , ASAO, Yoshihito , NAGAO, Kenjiro
- 申请人: Mitsubishi Electric Corporation
- 申请人地址: 7-3, Marunouchi 2-chome Chiyoda-Ku Tokyo 100-8310 JP
- 专利权人: Mitsubishi Electric Corporation
- 当前专利权人: Mitsubishi Electric Corporation
- 当前专利权人地址: 7-3, Marunouchi 2-chome Chiyoda-Ku Tokyo 100-8310 JP
- 代理机构: Hoffmann Eitle
- 优先权: JP2011059259 20110317
- 主分类号: H01L23/492
- IPC分类号: H01L23/492 ; H01L23/495 ; H01L23/433
摘要:
A power semiconductor module includes: a first metal substrate on which a power semiconductor device is mounted; a second metal substrate on which a power semiconductor device is not mounted; and an electrically insulating resin package which seals the first metal substrate and the second metal substrate. The back surface of the first metal substrate on the side opposite to the mounting surface of the power semiconductor device is made to expose outside the resin package to form a heat dissipation surface.
公开/授权文献
- EP3288075B1 POWER SEMICONDUCTOR MODULE 公开/授权日:2019-06-26
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