- 专利标题: RING OSCILLATOR ARCHITECTURE WITH CONTROLLED SENSITIVITY TO SUPPLY VOLTAGE
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申请号: EP16719662申请日: 2016-04-15
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公开(公告)号: EP3295564A1公开(公告)日: 2018-03-21
- 发明人: YU XINXIN , SWAMINATHAN ASHOK , VENERUS CHRISTIAN
- 申请人: QUALCOMM INC
- 专利权人: QUALCOMM INC
- 当前专利权人: QUALCOMM INC
- 优先权: US201514711158 2015-05-13
- 主分类号: H03K3/011
- IPC分类号: H03K3/011 ; H03K3/03
摘要:
A method and apparatus for controlling a supply sensitivity of a ring oscillator stage are provided. The apparatus is configured to generate, via a voltage biasing module, a first bias signal for a PMOS biasing module based on a supply voltage and a second bias signal for a NMOS biasing module based on the supply voltage, bias, via the PMOS biasing module, triode PMOS degeneration of the inverting module based on the first bias signal, bias, via the NMOS biasing module, triode NMOS degeneration of the inverting module based on the second bias signal, receive an input via an inverting module, and output, via the inverting module, an inverted version of the received input based on the biased triode NMOS degeneration and the biased triode PMOS degeneration.
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