发明公开
- 专利标题: NON-VOLATILE RANDOM ACCESS MEMORY (NVRAM) AS A REPLACEMENT FOR TRADITIONAL MASS STORAGE
-
申请号: EP18155421.3申请日: 2011-09-30
-
公开(公告)号: EP3346386A1公开(公告)日: 2018-07-11
- 发明人: PUTHIYEDATH, Leena, K. , FANNING, Blaise , OPFERMAN, Tony , CROSSLAND, James, B.
- 申请人: Intel Corporation
- 申请人地址: 2200 Mission College Boulevard Santa Clara, CA 95054 US
- 专利权人: Intel Corporation
- 当前专利权人: Intel Corporation
- 当前专利权人地址: 2200 Mission College Boulevard Santa Clara, CA 95054 US
- 代理机构: Rummler, Felix
- 主分类号: G06F12/00
- IPC分类号: G06F12/00 ; G06F13/14 ; G06F13/16 ; G06F12/08 ; G06F3/06 ; G06F9/44 ; G06F12/02 ; G06F12/06 ; G06F12/0866 ; G06F12/0804
摘要:
A non-volatile random access memory (NVRAM) is used in a computer system to perform multiple roles in a platform storage hierarchy, specifically, to replace traditional mass storage that is accessible by an I/O. The computer system includes a processor to execute software and a memory coupled to the processor. At least a portion of the memory comprises a non-volatile random access memory (NVRAM) that is byte -rewritable and byte-erasable by the processor. The system further comprises a memory controller coupled to the NVRAM to perform a memory access operation to access the NVRAM in response to a request from the software for access to a mass storage.
公开/授权文献
信息查询