- 专利标题: PROCÉDÉ DE GRAVURE SÉLECTIVE D'UN COPOLYMÈRE À BLOCS
- 专利标题(英): EP3347768A1 - Method for selective etching of a block copolymer
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申请号: EP16763793.3申请日: 2016-09-09
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公开(公告)号: EP3347768A1公开(公告)日: 2018-07-18
- 发明人: POSSEME, Nicolas , BARNOLA, Sébastien , PIMENTA BARROS, Patricia , SARRAZIN, Aurélien
- 申请人: Commissariat à l'Énergie Atomique et aux Énergies Alternatives
- 申请人地址: 25, Rue Leblanc Bâtiment "Le Ponant D" 75015 Paris FR
- 专利权人: Commissariat à l'Énergie Atomique et aux Énergies Alternatives
- 当前专利权人: Commissariat à l'Énergie Atomique et aux Énergies Alternatives
- 当前专利权人地址: 25, Rue Leblanc Bâtiment "Le Ponant D" 75015 Paris FR
- 代理机构: Cabinet Camus Lebkiri
- 优先权: FR1558481 20150911
- 国际公布: WO2017042312 20170316
- 主分类号: G03F7/00
- IPC分类号: G03F7/00
摘要:
The invention relates to a method for etching a layer (20) of assembled block copolymer comprising first and second polymer phases (20A-20B), the etching method including a first step of etching by a first plasma formed from carbon monoxide or a first gas mixture comprising a fluorocarbon gas and a depolymerising gas, the first etching step being carried out so as to partially etch the first polymer phase (20A) and to deposit a carbon layer (23) on the second polymer phase (20B), and a second step (S2) of etching by a second plasma formed from a second gas mixture comprising a depolymerising gas and a gas selected among the carbon oxides and the fluorocarbon gases, the second etching step being carried out so as to etch the first polymer phase (20A) and the carbon layer (23) on the second polymer phase (20B).
公开/授权文献
- EP3347768B1 PROCEDE DE GRAVURE SELECTIVE D'UN COPOLYMERE A BLOCS 公开/授权日:2019-07-24
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