A graphene-based layer transfer (GBLT) technique is disclosed. In this approach, a device layer including a III-V semiconductor, Si, Ge, III-N semiconductor, SiC, SiGe, or II-VI semiconductor is fabricated on a graphene layer, which in turn is disposed on a substrate. The graphene layer or the substrate can be lattice-matched with the device layer to reduce defect in the device layer. The fabricated device layer is then removed from the substrate via, for example, a stressor attached to the device layer. In GBLT, the graphene layer serves as a reusable and universal platform for growing device layers and also serves a release layer that allows fast, precise, and repeatable release at the graphene surface.