The present invention relates to methods for fabricating a semiconductor device and to the related semiconductor devices for use in harsh media. The semiconductor device comprises a silicon die (420) comprising a metal contact region (422) and, at least one passivation layer (421) covering the semiconductor die (420) and patterned such as to form an opening to the metal contact region (422) of the semiconductor die (420). The device also comprises a continuous part of a contact layer comprising a refractory metal. This continuous part overlaps and completely covers the opening in the at least one passivation layer (421), contacts the metal contact region (422) in the opening and adheres to the at least one passivation layer (421) along the entire edge of the continuous part. The contact layer comprises at least an adhesion layer (529) and at least a diffusion barrier layer. The device further comprises a noble metal layer (524) arranged over the contact layer and completely covering the continuous part, in which the noble metal layer (524) extends over the entire edge of the continuous part to adhere to the at least one passivation layer (421) around the edge of the continuous part.