An embodiment relates to an ultraviolet light-emitting device, a method for manufacturing the ultraviolet light-emitting element, a light-emitting element package, and a lighting device.
An ultraviolet light-emitting element according to an embodiment includes: a first conductive type first semiconductor layer having a light extraction structure; an etching-blocking layer on the first conductive type first semiconductor layer; a first conductive type second semiconductor layer on the etching-blocking layer, an active layer on the first conductive type second semiconductor layer; a second conductive type semiconductor layer on the active layer; and an electron spreading layer disposed between the etching-blocking layer and the active layer, wherein the electron spreading layer includes a first conductive type or an undoped AlGaN-based or a GaN-based semiconductor layer, an undoped AlN, and a first conductive type AlGaN-based second semiconductor layer, so that it is possible to improve electron spreading by generating an internal field by piezo-electric due to a difference in a lattice constant between the first conductive type or the undoped AlGaN-based or the GaN-based semiconductor layer and the undoped AlN, and inducing electron spreading at an interface between the first conductive type or the undoped AlGaN-based or the GaN-based semiconductor layer and the undoped AlN.