发明公开
- 专利标题: INFRARED IMAGE-FORMING LENS
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申请号: EP16870681.0申请日: 2016-11-30
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公开(公告)号: EP3385768A1公开(公告)日: 2018-10-10
- 发明人: SUZUKI, Akihiko
- 申请人: Kyocera Optec Co., Ltd.
- 申请人地址: 3-1778 Osoki Ome-shi Tokyo 198-0003 JP
- 专利权人: Kyocera Optec Co., Ltd.
- 当前专利权人: Kyocera Optec Co., Ltd.
- 当前专利权人地址: 3-1778 Osoki Ome-shi Tokyo 198-0003 JP
- 代理机构: Klunker IP Patentanwälte PartG mbB
- 优先权: JP2015236958 20151203
- 国际公布: WO2017094744 20170608
- 主分类号: G02B13/14
- IPC分类号: G02B13/14 ; G02B13/18
摘要:
An object of the present application is to provide an infrared imaging lens at a lower cost than before.
An infrared imaging lens (10) comprises, in order from an object side, a first lens (L1) formed of silicon whose minimum transmittance of infrared rays with a wavelength of 8µm to 13µm is at least 40% for a thickness of 1mm, and a second lens (L2) formed of chalcogenide glass. The silicon whose minimum transmittance of infrared rays with a wavelength of 8µm to 13µm is at least 40% for a thickness of 1mm can be obtained at low cost for example by controlling the oxygen concentration in CZ method.
An infrared imaging lens (10) comprises, in order from an object side, a first lens (L1) formed of silicon whose minimum transmittance of infrared rays with a wavelength of 8µm to 13µm is at least 40% for a thickness of 1mm, and a second lens (L2) formed of chalcogenide glass. The silicon whose minimum transmittance of infrared rays with a wavelength of 8µm to 13µm is at least 40% for a thickness of 1mm can be obtained at low cost for example by controlling the oxygen concentration in CZ method.
公开/授权文献
- EP3385768B1 INFRARED IMAGE-FORMING LENS 公开/授权日:2023-04-12
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