- 专利标题: ELECTROSTATIC DISCHARGE GUARD STRUCTURE
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申请号: EP16901001.4申请日: 2016-10-27
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公开(公告)号: EP3400613A1公开(公告)日: 2018-11-14
- 发明人: CELO, Dritan , GOODWILL, Dominic John , BERNIER, Eric
- 申请人: Huawei Technologies Co., Ltd.
- 申请人地址: Huawei Administration Building Bantian Longgang District Shenzhen, Guangdong 518129 CN
- 专利权人: Huawei Technologies Co., Ltd.
- 当前专利权人: Huawei Technologies Co., Ltd.
- 当前专利权人地址: Huawei Administration Building Bantian Longgang District Shenzhen, Guangdong 518129 CN
- 代理机构: Isarpatent
- 优先权: US201662330569P 20160502; US201615269331 20160919
- 国际公布: WO2017190479 20171109
- 主分类号: H01L31/02
- IPC分类号: H01L31/02 ; H01L31/075
摘要:
The present application provides an electrostatic discharge guard structure for photonic platform based photodiode systems. In particular this application provides a photodiode assembly comprising: a photodiode (such as a Si or SiGe photodiode); a waveguide (such as a silicon waveguide); and a guard structure, wherein the guard structure comprises a diode, extends about all or substantially all of the periphery of the Si or SiGe photodiode and allows propagation of light from the silicon waveguide into the Si or SiGe photodiode.
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