A photoelectric conversion device (AP) comprises a semiconductor substrate (SUB) including a photoelectric conversion portion, a silicon oxide film (116) arranged above the photoelectric conversion portion, and an insulating film (106) arranged between the photoelectric conversion portion and the silicon oxide film. An n-type first impurity region (104) constituting part of the photoelectric conversion portion and a p-type second impurity region (112) arranged between the insulating film and the first impurity region are provided in the semiconductor substrate. A portion of the insulating film above the second impurity region, and the second impurity region contain boron. An integrated value of a boron concentration from the surface of the semiconductor substrate to a first position where a boron concentration takes a minimal value in the second impurity region is larger than that from the surface of the semiconductor substrate to an upper surface of the silicon oxide film.