发明公开
- 专利标题： MEMORY DEVICE WITH MAGNETIC TUNNEL JUNCTIONS AND METHOD FOR MANUFACTURING THEREOF
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申请号： EP17211020.7申请日： 2017-12-29
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公开(公告)号： EP3506359A1公开(公告)日： 2019-07-03
- 发明人: KAR, Gouri Sankar , COSEMANS, Stefan
- 申请人： IMEC vzw
- 申请人地址： Kapeldreef 75 3001 Leuven BE
- 专利权人： IMEC vzw
- 当前专利权人： IMEC vzw
- 当前专利权人地址： Kapeldreef 75 3001 Leuven BE
- 代理机构： AWA Sweden AB
- 主分类号： H01L27/22
- IPC分类号： H01L27/22 ; H01L43/12
摘要：
The disclosed memory device (10) comprises memory elements (11, 12), formed of a stack comprising at least a second magnetic layer (120) over a first magnetic layer (110) arranged on a substrate (100), and selector devices (141, 142) in contact with respective memory elements and arranged in or above the second layer, wherein the memory elements are interconnected via the first layer and separated from each other by a trench (150) formed in the second layer. Preferably, the memory elements are MTJ elements and the selector devices are transistors.
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IPC分类:
