发明公开
- 专利标题： SELF-ADJUSTABLE RF SWITCH CELL
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申请号： EP19153127.6申请日： 2019-01-22
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公开(公告)号： EP3514959A1公开(公告)日： 2019-07-24
- 发明人: BAKALSKI, Winfried
- 申请人： Infineon Technologies AG
- 申请人地址： Am Campeon 1-15 85579 Neubiberg DE
- 专利权人： Infineon Technologies AG
- 当前专利权人： Infineon Technologies AG
- 当前专利权人地址： Am Campeon 1-15 85579 Neubiberg DE
- 代理机构： König, Andreas Rudolf
- 优先权： US201815876972 20180122
- 主分类号： H03K17/10
- IPC分类号： H03K17/10 ; H03K17/12 ; H03K17/0412 ; H01P1/15 ; H03K17/081 ; H04B1/44
摘要：
An RF switch includes two or more coupled RF switch cells, each RF switch cell including a transistor having a first source/drain node, a second source/drain node, and a gate node, a first varactor is coupled between the first source/drain node and the gate node, and a second varactor is coupled between the second source/drain node and the gate node.
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