发明公开
EP3536761A1 QUANTUM DOTS
审中-公开
- 专利标题: QUANTUM DOTS
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申请号: EP19161974.1申请日: 2019-03-11
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公开(公告)号: EP3536761A1公开(公告)日: 2019-09-11
- 发明人: JANG, Eun Joo , WON, Yuho , KIM, Jin A , KIM, Sung Woo , LEE, Jeong Hee , KIM, Tae Hyng
- 申请人: Samsung Electronics Co., Ltd.
- 申请人地址: 129, Samsung-ro Yeongtong-gu Suwon-si, Gyeonggi-do, 16677 KR
- 专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人地址: 129, Samsung-ro Yeongtong-gu Suwon-si, Gyeonggi-do, 16677 KR
- 代理机构: Elkington and Fife LLP
- 优先权: KR20180028319 20180309
- 主分类号: C09K11/02
- IPC分类号: C09K11/02 ; C09K11/88 ; H01L51/50 ; H05B33/14
摘要:
A quantum dot includes a core including a first semiconductor nanocrystal material including zinc, tellurium, and selenium; and a semiconductor nanocrystal shell disposed on (e.g., directly on) the core and including zinc, selenium, and sulfur, wherein the quantum dot does not include cadmium, wherein a size of the quantum dot is greater than or equal to about 10 nanometers (nm) and the quantum dot includes at least four protrusions. A production method thereof and an electronic device including the same are also disclosed.
公开/授权文献
- EP3536761B1 QUANTUM DOTS 公开/授权日:2021-11-24
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