- 专利标题： FIELD-EFFECT TRANSISTOR-BASED BIOSENSOR
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申请号： EP18192768.2申请日： 2018-09-05
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公开(公告)号： EP3620783A1公开(公告)日： 2020-03-11
- 发明人: HELLINGS, Geert , MARTENS, Koen
- 申请人： IMEC vzw
- 申请人地址： Kapeldreef 75 3001 Leuven BE
- 专利权人： IMEC vzw
- 当前专利权人： IMEC vzw
- 当前专利权人地址： Kapeldreef 75 3001 Leuven BE
- 代理机构： DenK iP
- 主分类号： G01N27/414
- IPC分类号： G01N27/414 ; H01L29/10
摘要：
A sensor comprising a field effect transistor comprising:
• an active region comprising:
∘ a source region and a drain region defining a source-drain axis,
∘ a channel region between the source region and the drain region,
• a dielectric region on the channel region, comprising at least a first zone on a first portion of the channel region and a second zone on a second portion of the channel region, the first zone measuring from 1 to 100 nm in the direction of the source-drain axis and being adapted to create a different threshold voltage for the first portion of the channel region than for the second portion of the channel region, and
• a fluidic gate region to which a top surface of the dielectric region is exposed. A biosensing device comprising such a sensor; a method for using such a sensor; and a process for making such a sensor.
• an active region comprising:
∘ a source region and a drain region defining a source-drain axis,
∘ a channel region between the source region and the drain region,
• a dielectric region on the channel region, comprising at least a first zone on a first portion of the channel region and a second zone on a second portion of the channel region, the first zone measuring from 1 to 100 nm in the direction of the source-drain axis and being adapted to create a different threshold voltage for the first portion of the channel region than for the second portion of the channel region, and
• a fluidic gate region to which a top surface of the dielectric region is exposed. A biosensing device comprising such a sensor; a method for using such a sensor; and a process for making such a sensor.
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