- 专利标题: CONTROL DEVICE AND SEMICONDUCTOR APPARATUS
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申请号: EP18802396.4申请日: 2018-04-02
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公开(公告)号: EP3641113A1公开(公告)日: 2020-04-22
- 发明人: AKAHANE, Masashi
- 申请人: Fuji Electric Co., Ltd.
- 申请人地址: 1-1 Tanabeshinden Kawasaki-ku Kawasaki-shi, Kanagawa 210-9530 JP
- 专利权人: Fuji Electric Co., Ltd.
- 当前专利权人: Fuji Electric Co., Ltd.
- 当前专利权人地址: 1-1 Tanabeshinden Kawasaki-ku Kawasaki-shi, Kanagawa 210-9530 JP
- 代理机构: MERH-IP Matias Erny Reichl Hoffmann Patentanwälte PartG mbB
- 优先权: JP2017097300 20170516
- 国际公布: WO2018211840 20181122
- 主分类号: H02M1/00
- IPC分类号: H02M1/00 ; H02M1/08 ; H02M7/48
摘要:
A control device includes a current detecting section that detects a sense current for a current flowing through a semiconductor element; a transient sensing period detecting section that detects a transient sensing period from a transient rising to a transient falling of a detection signal of the sense current, in response to the semiconductor element being turned ON; and a control section that controls the semiconductor element according to a detection result of the transient sensing period, based on the sense current detection signal. By detecting the transient sensing period with the transient sensing period detecting section and controlling the semiconductor element with the control section according to the transient sensing period detection result, based on the sense current detection signal, it is possible to identify overcurrent according to the transient response detection result of the sense current during the transient sensing period, and to actively protect the semiconductor element.
公开/授权文献
- EP3641113B1 CONTROL DEVICE AND SEMICONDUCTOR APPARATUS 公开/授权日:2022-05-11
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