发明公开
- 专利标题: ELECTRONIC CIRCUITS
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申请号: EP20172533.0申请日: 2014-07-16
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公开(公告)号: EP3716485A1公开(公告)日: 2020-09-30
- 发明人: DE OLIVEIRA, Joao , WHITE, Scott Darren , RAMSDALE, Catherine
- 申请人: Pragmatic Printing Ltd
- 申请人地址: National Centre for Printable Electronics Thomas Wright Way NETPark Sedgefield, Durham TS21 3FG GB
- 专利权人: Pragmatic Printing Ltd
- 当前专利权人: Pragmatic Printing Ltd
- 当前专利权人地址: National Centre for Printable Electronics Thomas Wright Way NETPark Sedgefield, Durham TS21 3FG GB
- 代理机构: HGF
- 优先权: GB201312809 20130717
- 主分类号: H03K19/0944
- IPC分类号: H03K19/0944
摘要:
An electronic circuit comprises: an input terminal; an output terminal; a first supply rail; a second supply rail; a first field effect transistor, FET, of a first type and having respective gate, source and drain terminals; a second FET of said first type and having respective gate, source and drain terminals; a third FET of said first type and having respective gate, source and drain terminals; a fourth FET of said first type and having respective gate, source and drain terminals; a first load; and a second load, wherein the source of the first FET is connected to the first supply rail, the drain of the first FET and the source of the second FET are connected to the output terminal, the drain of the second FET is connected to the second supply rail, the gate of the third FET and the gate of the fourth FET are connected to the input terminal, the drain of the third FET is connected to the second supply rail, the first load is connected between the first supply rail and the source of the third FET, the second load is connected between the drain of the fourth FET and the second supply rail, the gate of the second FET is connected to a node between the source of the third FET and the first load such that a voltage at the source of the third FET is applied to the gate of the second FET, and the gate of the first FET is connected to a node between the drain of the fourth FET and the second load such that a voltage at the drain of the fourth FET is applied to the gate of the first FET.
公开/授权文献
- EP3716485B1 ELECTRONIC CIRCUITS 公开/授权日:2024-07-03
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