- 专利标题： MATERIAL WITH DIRECTIONAL MICROSTRUCTURE
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申请号： EP20206496.0申请日： 2017-04-11
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公开(公告)号： EP3796340A1公开(公告)日： 2021-03-24
- 发明人: HOSEK, Martin , KRISHNASAMY, Jayaraman
- 申请人： Persimmom Technologies, Corp.
- 申请人地址： US Wakefield, MA 01880 200 Harward Mill Square
- 代理机构： Swindell & Pearson Limited
- 优先权： US201662320723 P 20160411
- 主分类号： H01F1/33
- IPC分类号： H01F1/33 ; B22F1/00 ; H02K1/02 ; H02K1/14 ; C23C4/08 ; C23C4/11 ; C23C4/123 ; C23C4/129 ; C23C4/131 ; C23C28/02 ; C23C30/00 ; H01F41/02 ; B22F1/02 ; B22F3/115 ; B22F5/10
摘要：
A material comprises at least one layer of a plurality of domains, each domain being flattened in a first direction and elongated in a second direction normal to the first direction. The flattened and elongated domains define an anisotropic microstructure that facilitates a magnetic flux flow in the second direction.
公开/授权文献
- EP3796340B8 MATERIAL WITH DIRECTIONAL MICROSTRUCTURE 公开/授权日：2024-01-10
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