- 专利标题: MULTI-LEVEL MEMORY WITH IMPROVED MEMORY SIDE CACHE IMPLEMENTATION
-
申请号: EP20194493.1申请日: 2020-09-04
-
公开(公告)号: EP3839747A1公开(公告)日: 2021-06-23
- 发明人: GALBI, Duane E. , BURRES, Bradley A. , ADILETTA, Matthew J. , WILKINSON, Hugh , GORIUS, Aaron
- 申请人: Intel Corporation
- 申请人地址: US Santa Clara, CA 95054 2200 Mission College Boulevard
- 代理机构: Rummler, Felix
- 优先权: US201916721045 20191219
- 主分类号: G06F12/0804
- IPC分类号: G06F12/0804 ; G06F12/0811 ; G06F13/16
摘要:
An apparatus is described. The apparatus includes a semiconductor chip package. The semiconductor chip package includes an SOC. The SOC has a memory controller. The semiconductor chip package includes an interface to an external memory. The semiconductor chip package includes a memory side cache. The memory side cache is composed of eDRAM and is coupled between the memory controller and the interface to the external memory. The eDRAM is to cache more frequently used items of the external memory. The semiconductor chip package has an out-of-order interface between the memory controller and the memory side cache.
信息查询
IPC分类: