• 专利标题: RAW MATERIAL FOR THIN FILM FORMATION USE FOR USE IN ATOMIC LAYER DEPOSITION METHOD, RAW MATERIAL FOR THIN FILM FORMATION USE, METHOD FOR PRODUCING THIN FILM, AND COMPOUND
  • 申请号: EP19869747.6
    申请日: 2019-09-24
  • 公开(公告)号: EP3862462A1
    公开(公告)日: 2021-08-11
  • 发明人: OKADA, NanaYOSHINO, TomoharuYAMASHITA, Atsushi
  • 申请人: ADEKA CORPORATION
  • 申请人地址: JP Arakawa-ku Tokyo 116-8554 2-35, Higashiogu 7-chome
  • 代理机构: Kador & Partner PartG mbB
  • 优先权: JP2018189092 20181004
  • 国际公布: WO2020071175 20200409
  • 主分类号: C23C16/18
  • IPC分类号: C23C16/18 C23C16/455 H01L21/365
RAW MATERIAL FOR THIN FILM FORMATION USE FOR USE IN ATOMIC LAYER DEPOSITION METHOD, RAW MATERIAL FOR THIN FILM FORMATION USE, METHOD FOR PRODUCING THIN FILM, AND COMPOUND
摘要:
The present invention provides a thin-film forming raw material, which is used in an atomic layer deposition method, including a compound represented by the following general formula (1):

where R 1 to R 4 each independently represent an alkyl group having 1 to 5 carbon atoms, and A 1 represents an alkanediyl group having 1 to 5 carbon atoms.
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