发明公开
- 专利标题: SCHOTTKY BARRIER DIODE
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申请号: EP19876519.0申请日: 2019-10-09
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公开(公告)号: EP3872866A1公开(公告)日: 2021-09-01
- 发明人: ARIMA, Jun , FUJITA, Minoru , HIRABAYASHI, Jun , SASAKI Kohei
- 申请人: TDK Corporation , Tamura Corporation , Novel Crystal Technology, Inc.
- 申请人地址: JP Tokyo 103-6128 2-5-1, Nihonbashi, Chuo-ku,; JP Tokyo 178-8511 1-19-43 Higashi-Oizumi Nerima-ku; JP Sayama-shi, Saitama 350-1328 2-3-1 Hirosedai
- 代理机构: Epping - Hermann - Fischer
- 优先权: JP2018199203 20181023
- 国际公布: WO2020085095 20200430
- 主分类号: H01L29/872
- IPC分类号: H01L29/872 ; H01L29/06 ; H01L29/41 ; H01L29/47
摘要:
An object of the present invention is to provide a Schottky barrier diode less liable to cause dielectric breakdown due to concentration of an electric field. A Schottky barrier diode according to this disclosure includes a semiconductor substrate 20 made of gallium oxide, a drift layer 30 made of gallium oxide and provided on the semiconductor substrate 20, an anode electrode 40 brought into Schottky contact with the drift layer 30, a cathode electrode 50 brought into ohmic contact with the semiconductor substrate 20, an insulating layer 80 provided on the drift layer 30 so as to surround the anode electrode 40 in a plan view, and a semiconductor layer 70 provided on a surface of a part of the drift layer 30 that is positioned between the anode electrode 40 and the insulating layer 80 and on the insulating layer 80. The semiconductor layer 70 has a conductivity type opposite to that of the drift layer 30 .
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