- 专利标题： VERTICAL TYPE TRANSISTOR, INVERTER INCLUDING THE SAME, AND VERTICAL TYPE SEMICONDUCTOR DEVICE INCLUDING THE SAME
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申请号： EP21162665.0申请日： 2021-03-15
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公开(公告)号： EP3882978A1公开(公告)日： 2021-09-22
- 发明人: LEE, Minhyun , SEOL, Minsu , CHO, Yeonchoo , SHIN, Hyeonjin
- 申请人： Samsung Electronics Co., Ltd.
- 申请人地址： KR Suwon-si 16677 129, Samsung-ro Yeongtong-gu Gyeonggi-do
- 代理机构： Elkington and Fife LLP
- 优先权： KR20200175834 20201215
- 主分类号： H01L29/786
- IPC分类号： H01L29/786 ; H01L29/778 ; H01L29/24
摘要：
A vertical type transistor includes: a substrate; a first source/drain electrode layer provided on the substrate; a second source/drain electrode layer provided above the first source/drain electrode layer; a first gate electrode layer provided between the first and second source/drain electrode layers; a first gate insulating film passing through the first gate electrode layer; a hole passing through the second source/drain electrode layer, the first gate insulating film, and the first source/drain electrode layer; and a first channel layer provided on a lateral side of the hole, wherein the first channel layer may include a 2D semiconductor.
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