- 专利标题： A METHOD FOR FABRICATING A MAGNETIC SPIN VALVE DEVICE COMPRISING FERROMAGNETIC LAYERS WITH NON-COLLINEAR MAGNETIZATIONS
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申请号： EP21153254.4申请日： 2021-01-25
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公开(公告)号： EP4033503A1公开(公告)日： 2022-07-27
- 发明人: KHAYDUKOV, Yury , KELLER, Thomas , KEIMER, Bernhard , MORARI, Roman , SIDORENKO, Anatolie
- 申请人： Max-Planck-Gesellschaft zur Förderung der Wissenschaften e.V.
- 申请人地址： DE 80539 München Hofgartenstraße 8
- 代理机构： Lambsdorff & Lange Patentanwälte Partnerschaft mbB
- 主分类号： H01F10/32
- IPC分类号： H01F10/32 ; H01F41/30 ; H01L39/22
摘要：
A method (100) for fabricating a magnetic device comprises providing a layer stack (110), the layer stack comprising a substrate,
a first ferromagnetic layer disposed above the substrate, the first ferromagnetic layer comprising a uniaxial magnetic anisotropy including an easy axis,
a non-magnetic layer disposed on the first ferromagnetic layer,
a second ferromagnetic layer disposed on the non-magnetic layer, the second ferromagnetic layer comprising a unidirectional anisotropy, and
an antiferromagnetic layer disposed on the second ferromagnetic layer, the antiferromagnetic layer comprising a Neel temperature T N ;
heating the layer stack above the Neel temperature T N of the antiferromagnetic layer (120);
applying a magnetic field H CL to the layer stack, the magnetic field H CL comprising a magnetic field direction having an arbitrary angle with respect to the easy axis (130);
cooling the layer stack below the Neel temperature T N of the antiferromagnetic layer with the magnetic field H CL applied; removing the magnetic field H CL .
a first ferromagnetic layer disposed above the substrate, the first ferromagnetic layer comprising a uniaxial magnetic anisotropy including an easy axis,
a non-magnetic layer disposed on the first ferromagnetic layer,
a second ferromagnetic layer disposed on the non-magnetic layer, the second ferromagnetic layer comprising a unidirectional anisotropy, and
an antiferromagnetic layer disposed on the second ferromagnetic layer, the antiferromagnetic layer comprising a Neel temperature T N ;
heating the layer stack above the Neel temperature T N of the antiferromagnetic layer (120);
applying a magnetic field H CL to the layer stack, the magnetic field H CL comprising a magnetic field direction having an arbitrary angle with respect to the easy axis (130);
cooling the layer stack below the Neel temperature T N of the antiferromagnetic layer with the magnetic field H CL applied; removing the magnetic field H CL .
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