发明公开
- 专利标题: CHARGING CIRCUIT
-
申请号: EP22210170.1申请日: 2022-11-29
-
公开(公告)号: EP4187764A1公开(公告)日: 2023-05-31
- 发明人: CHEN, Siyuan , WEN, Sihua
- 申请人: Silergy Semiconductor Technology (Hangzhou) Ltd
- 申请人地址: CN Hangzhou City, Zhejiang 310051 No. 6, Lianhui Street Xixing Sub-district Binjiang District
- 代理机构: Viering, Jentschura & Partner mbB Patent- und Rechtsanwälte
- 优先权: CN202111435259 20211129
- 主分类号: H02M1/00
- IPC分类号: H02M1/00 ; H02M3/07 ; H02M3/158 ; H02M7/483
摘要:
A charging circuit is disclosed. The charging circuit utilizes multi-level technology to improve the efficiency of the charging circuit under the premise of maintaining the boosting, bucking, and bucking-boosting functions of the traditional buck-boost topology. Especially under the circumstance of high input voltage, it can give full play to the advantages of multi levels. The switching loss, withstand voltage requirements of power MOSFTs, and inductance are reduced, and the efficiency is improved.
信息查询