发明公开
- 专利标题: SEMICONDUCTOR IQ MODULATOR
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申请号: EP20948171.2申请日: 2020-08-03
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公开(公告)号: EP4191326A1公开(公告)日: 2023-06-07
- 发明人: OZAKI, Josuke , OGISO, Yoshihiro , HASHIZUME, Yasuaki , TANOBE, Hiromasa , ISHIKAWA, Mitsuteru
- 申请人: Nippon Telegraph And Telephone Corporation
- 申请人地址: JP Chiyoda-ku Tokyo 100-8116 5-1, Otemachi 1-chome
- 代理机构: TBK
- 国际公布: WO2022029855 20220210
- 主分类号: G02F1/025
- IPC分类号: G02F1/025
摘要:
A semiconductor IQ optical modulator in which a phase modulation unit is configured by a differential capacitively loaded traveling-wave electrode structure based on an SS line configuration, phase modulation units of adjacent channels are spaced apart from each other by 400 µm or more, a distance between main signal lines of the capacitance loading type structure is 60 µm or less, a DC phase adjustment electrode and a PAD are provided between an I side phase modulation unit and a Q side phase modulation unit, the DC phase adjustment electrode is spaced apart by at least 80 µm or more from a signal line of the phase adjustment unit, and a crosstalk characteristic between the adjacent channels is -30 dB or less in a required frequency band.
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