发明公开
- 专利标题: DISPLAY PANEL AND DISPLAY DEVICE
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申请号: EP21944591.3申请日: 2021-06-10
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公开(公告)号: EP4207164A1公开(公告)日: 2023-07-05
- 发明人: WEI, Feng , WANG, Binyan , CHENG, Tianyi , LI, Meng
- 申请人: BOE Technology Group Co., Ltd. , Chengdu BOE Optoelectronics Technology Co., Ltd.
- 申请人地址: CN Beijing 100015 No. 10 Jiuxianqiao Rd. Chaoyang District; CN Chengdu, Sichuan 611731 No. 1188, Hezuo Road (West Zone) Hi-tech Development Zone
- 代理机构: Potter Clarkson
- 国际公布: WO2022257082 20221215
- 主分类号: G09G3/3233
- IPC分类号: G09G3/3233
摘要:
A display panel and a display device, where the display panel includes a pixel driving circuit, the pixel driving circuit includes a driving transistor (T3) and a first transistor (T1), a first electrode of the first transistor (T1) is connected to a gate of the driving transistor (T3), a second electrode thereof is connected to a first initial signal line (Vinit1), the driving transistor (T3) is a P-type low temperature polysilicon transistor, and the first transistor (T1) is an N-type oxide transistor. The display panel further includes: a base substrate , a second conductive layer, a second active layer, a third conductive layer, and a fourth conductive layer. The second conductive layer is located on one side of the base substrate, and includes a third gate line (1Re1), where an orthographic projection of the third gate line (1Re1) on the base substrate extends along a first direction (X), and a partial structure of the third gate line (1Re1) is configured to form a first gate of the first transistor (T1). The second active layer is located on one side of the second conductive layer away from the base substrate, and a partial structure of the second active layer is configured to form a channel region of the first transistor (T1). The third conductive layer is located on one side of the second active layer away from the base substrate, and includes a fifth gate line (2Re1), where an orthographic projection of the fifth gate line (2Re1) on the base substrate extends along the first direction (X), and a partial structure of the fifth gate line (2Re1) is configured to form a second gate of the first transistor (T1). The fourth conductive layer is located on one side of the base substrate, and includes the first initial signal line (Vinit1), where an orthographic projection of the first initial signal line (Vinit1) on the base substrate extends along the first direction (X), and the first initial signal line (Vinit1) is configured to provide the first initial signal line (Vinit1).
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