- 专利标题: METHOD OF FORMING BUMPLESS SUPERCONDUCTOR DEVICE
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申请号: EP23151185.8申请日: 2021-03-25
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公开(公告)号: EP4207996A1公开(公告)日: 2023-07-05
- 发明人: CANTALOUBE, Christopher A.
- 申请人: Microsoft Technology Licensing LLC
- 申请人地址: US Redmond WA 98052-6399 One Microsoft Way
- 代理机构: Judge, Samuel David
- 优先权: US202016858812 20200427
- 主分类号: H10N69/00
- IPC分类号: H10N69/00 ; H01L23/485
摘要:
Described is a method of forming an integrated circuit (50) that comprises a plurality of conductive contact pads (60) on a surface of a first substrate (52), and a dielectric layer (54) overlying the first substrate and the conductive contact pads, which may be coupled to respective qubits (62). A second substrate (56) overlies the dielectric layer, and a plurality of superconducting contacts (58) extend through the second substrate and the dielectric layer such that each superconducting contact is aligned with and in contact with a respective conductive contact pad and may be coupled to a respective resonator (64).
公开/授权文献
- EP4207996B1 METHOD OF FORMING BUMPLESS SUPERCONDUCTOR DEVICE 公开/授权日:2024-05-15
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