- 专利标题: SEMICONDUCTOR DEVICE AND METHOD FOR PRODUCING THEREOF
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申请号: EP22153545.3申请日: 2022-01-26
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公开(公告)号: EP4220729A1公开(公告)日: 2023-08-02
- 发明人: Weber, Hans
- 申请人: Infineon Technologies Austria AG
- 申请人地址: AT 9500 Villach Siemensstrasse 2
- 代理机构: Westphal, Mussgnug & Partner, Patentanwälte mbB
- 主分类号: H01L29/06
- IPC分类号: H01L29/06 ; H01L29/78 ; H01L21/04 ; H01L29/808 ; H01L29/08
摘要:
A method for forming a semiconductor device and a semiconductor device are disclosed. The method includes: forming a trench structure (2) with a plurality of trenches (22) in an inner region (130) and an edge region (140) of a SiC semiconductor body (100) such that the trench structure (2) extends from a first surface (101) of the semiconductor body (100) through a second semiconductor layer (120) into a first semiconductor layer (110) and such that the trench structure (2), in the second semiconductor layer (120), into forms a plurality of mesa regions; and forming at least one transistor cell (1) at least partially in each of the mesa regions (121) in the inner region (130). Forming each transistor cell (1) includes forming at least one compensation region (17), forming the at least one compensation region (17) includes implanting dopant atoms of a second doping type via sidewalls of the trenches (22) into the mesa regions (121) in the inner region (130), and forming the at least one compensation region (17) in each of the mesa regions (121) in the inner region (121) includes at least partially covering the edge region (140) with an implantation mask (301; 401).
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