FOUR JUNCTION SOLAR CELL AND SOLAR CELL ASSEMBLIES FOR SPACE APPLICATIONS
摘要:
A four junction space-qualified solar cell designed for operation at AM0 and at a 1 MeV electron equivalent fluence of at least 1 × 10 14 e/cm 2, having an upper first solar subcell composed of a semiconductor material having a first band gap; a second solar subcell adjacent to said first solar subcell and composed of a semiconductor material having a second band gap smaller than the first band gap and being lattice matched with the upper first solar subcell; a third solar subcell adjacent to said second solar subcell and composed of a semiconductor material having a third band gap smaller than the second band gap and being lattice matched with the second solar subcell; and a fourth solar subcell adjacent to and lattice mismatched from said third solar subcell and composed of a semiconductor material having a fourth band gap smaller than the third band gap.
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IPC分类:
H 电学
H01 基本电气元件
H01L 半导体器件;其他类目中不包括的电固体器件(使用半导体器件的测量入G01;一般电阻器入H01C;磁体、电感器、变压器入H01F;一般电容器入H01G;电解型器件入H01G9/00;电池组、蓄电池入H01M;波导管、谐振器或波导型线路入H01P;线路连接器、汇流器入H01R;受激发射器件入H01S;机电谐振器入H03H;扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R;一般电光源入H05B;印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K;在具有特殊应用的电路中使用的半导体器件见应用相关的小类)
H01L31/00 对红外辐射、光、较短波长的电磁辐射,或微粒辐射敏感的,并且专门适用于把这样的辐射能转换为电能的,或者专门适用于通过这样的辐射进行电能控制的半导体器件;专门适用于制造或处理这些半导体器件或其部件的方法或设备;其零部件(H01L51/42优先;由形成在一共用衬底内或其上的多个固态组件,而不是辐射敏感元件与一个或多个电光源的结合所组成的器件入H01L27/00)
H01L31/04 .用作光伏〔PV〕转换器件(制造中其测试入H01L21/66;制造之后其测试入H02S50/10)
H01L31/06 ..以至少有一个电位跃变势垒或表面势垒为特征的
H01L31/068 ...只是PN单质结型势垒的,例如体硅PN单质结太阳能电池或薄膜多晶硅PN单质结太阳能电池
H01L31/0693 ....除了掺杂材料或其他杂质,只包括AIIIBV化合物的装置,例如GaAs或InP太阳能电池
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