This application provides a method for preparing a perovskite cell with multiple hole transport layers. The method includes a process of forming the multiple hole transport layers, where the process of forming the multiple hole transport layers includes the following steps: (1) sputtering a nickel oxide target material in a first atmosphere to form a first hole transport layer, where the first atmosphere contains argon and oxygen, and a volume ratio of the argon to the oxygen is approximately 0:1 to 1.5: 1; (2) performing annealing treatment on the first hole transport layer; and (3) sputtering the nickel oxide target material onto the first hole transport layer subjected to the annealing treatment in a second atmosphere to form a second hole transport layer, where the second atmosphere contains argon-containing gas and oxygen, a volume ratio of the argon-containing gas to the oxygen is approximately 1:0 to 4:1, and the argon-containing gas contains argon, and optionally hydrogen. This application further provides a perovskite cell (100) with multiple hole transport layers prepared by using the above method.