- 专利标题: LIGHT EMITTING ELEMENT AND METHOD OF FABRICATING LIGHT EMITTING ELEMENT
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申请号: EP23185626.1申请日: 2023-07-14
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公开(公告)号: EP4350786A1公开(公告)日: 2024-04-10
- 发明人: LEE, Seung A , PARK, Bong Chun , LEE, Kwan Jae , LEE, Dong Eon , LEE, So Young
- 申请人: Samsung Display Co., Ltd.
- 申请人地址: KR Yongin-si, Gyeonggi-do 17113 1, Samsung-ro Giheung-gu
- 代理机构: Marks & Clerk LLP
- 优先权: KR20220127293 20221005
- 主分类号: H01L33/00
- IPC分类号: H01L33/00 ; H01L33/02 ; H01L33/06 ; H01L33/20 ; H01L33/30
摘要:
A light emitting element includes a first semiconductor layer, an active layer disposed on the first semiconductor layer, a second semiconductor layer disposed on the active layer, and an insulating layer enclosing the first semiconductor layer, the active layer, and at least a portion of the second semiconductor layer. The first semiconductor layer, the active layer, and the second semiconductor layer are successively disposed in a first direction. The active layer includes a first barrier layer, a second barrier layer, and a first well layer disposed between the first barrier layer and the second barrier layer, and including a non-uniform indium composition ratio in a first direction and a second direction intersecting the first direction, and including a non-uniform indium density in a third direction intersecting the first direction and the second direction.
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