This application provides a single-ended memory, and relates to the field of storage technologies, to resolve a problem of a low read speed of a conventional single-ended memory. The single-ended memory includes a storage unit distributed in an array, where the storage unit is connected to a read bit line and a read word line, the read bit line is connected to a precharge unit through a column selection unit, the read bit line is connected to an output end of a leakage current compensation unit through the column selection unit, the read bit line is further connected to a control end of the leakage current compensation unit through a feedback circuit, and when determining that a level of the read bit line is lower than a first predetermined value, the feedback circuit outputs a feedback signal to the control end of the leakage current compensation unit, to stop the leakage current compensation unit from charging the read bit line through the output end.