- 专利标题： HOLE-SELECTIVE CONTACT STRUCTURE FOR SOLAR CELL
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申请号： EP22306957.6申请日： 2022-12-20
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公开(公告)号： EP4391087A1公开(公告)日： 2024-06-26
- 发明人: MUNOZ, Maria-Delfina , MASMITJA RUSIÑOL, Gerard
- 申请人： COMMISSARIAT À L'ÉNERGIE ATOMIQUE ET AUX ÉNERGIES ALTERNATIVES , Universitat Politècnica de Catalunya
- 申请人地址： FR 75015 Paris Bat Le Ponant 25 rue Leblanc
- 专利权人： COMMISSARIAT À L'ÉNERGIE ATOMIQUE ET AUX ÉNERGIES ALTERNATIVES,Universitat Politècnica de Catalunya
- 当前专利权人： COMMISSARIAT À L'ÉNERGIE ATOMIQUE ET AUX ÉNERGIES ALTERNATIVES,Universitat Politècnica de Catalunya
- 当前专利权人地址： FR 75015 Paris Bat Le Ponant 25 rue Leblanc
- 代理机构： Germain Maureau
- 主分类号： H01L31/0687
- IPC分类号： H01L31/0687 ; H01L31/0747 ; H01L31/076 ; H10K30/00
摘要：
A multilayer structure (100) for photovoltaic applications, the multilayer structure (100) comprising:
- a n-type high-work function transition metal oxide (TMO) layer (3) deposited on a support structure (6),
- a thin n-type low-work function transition metal oxide (TMO) layer (2) covering the n-type high-work function TMO layer (3), and
- a first absorber cell (1) based on a perovskite material on the n-type low-work function TMO layer (2),
the n-type high-work function TMO layer (3) and the thin n-type low-work function TMO layer (2) forming a hole-selective contact structure (200).
- a n-type high-work function transition metal oxide (TMO) layer (3) deposited on a support structure (6),
- a thin n-type low-work function transition metal oxide (TMO) layer (2) covering the n-type high-work function TMO layer (3), and
- a first absorber cell (1) based on a perovskite material on the n-type low-work function TMO layer (2),
the n-type high-work function TMO layer (3) and the thin n-type low-work function TMO layer (2) forming a hole-selective contact structure (200).
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