A first semiconductor layer that is provided on a substrate, an active layer that is provided on the first semiconductor layer, a second semiconductor layer that is provided on the active layer and is of an opposite conductive type from the first semiconductor layer, an air-hole layer that is included in the first semiconductor layer and includes an air hole disposed with a two-dimensional periodicity in a plane parallel to the active layer, and a reflection layer that is provided on the second semiconductor layer and has a reflection surface, are included. A light emission surface is provided on a rear surface of the substrate, the air-hole layer has a diffraction surface that is a symmetrical center surface when light standing in the air-hole layer is diffracted with an electric field amplitude symmetrical in a direction orthogonal to the air-hole layer, and a separation distance between the diffraction surface and the reflection surface is provided such that a light intensity of combined light of first diffracted light diffracted from the diffraction surface to a side of the light emission surface and second diffracted light diffracted from the diffraction surface to a side of the reflection layer and reflected on the reflection surface is larger than a light intensity of the first diffracted light.