Method of manufacturing an optoelectronic device (1), comprising the steps of:
- providing a substrate (3);
- depositing a first electrode layer (5) on said substrate (3);
- depositing a first charge-carrier selective layer (7) with a thickness less than 5nm situated directly on said first electrode layer (5);
- depositing insulating silicon oxide nanoparticles (8) directly on said first charge-carrier selective layer (7), said particles having a diameter between 10 nm and 100 nm;
- depositing a perovskite-based semiconductor layer (9) on said first charge-carrier selective layer (7) and on said insulating silicon oxide nanoparticles (8), said perovskite-based semiconductor layer (9) being in intimate contact with both said first charge-carrier selective layer (7) and said insulating silicon oxide nanoparticles (8);
- depositing a second charge-carrier selective layer (11) on said perovskite-based semiconductor layer;
- depositing a second electrode layer (13) on said second charge-carrier selective layer (11).