- 专利标题： Semiconductor device and manufacturing method thereof
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申请号： JP2002380090申请日： 2002-12-27
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公开(公告)号： JP2004214305A公开(公告)日： 2004-07-29
- 发明人: NAGAMINE MAKOTO , MITANI YUICHIRO , MORI SHINJI , SATO MUNEHARU
- 申请人： Toshiba Corp , Toshiba Nanoanalysis Corp , 東芝ナノアナリシス株式会社 , 株式会社東芝
- 专利权人： Toshiba Corp,Toshiba Nanoanalysis Corp,東芝ナノアナリシス株式会社,株式会社東芝
- 当前专利权人： Toshiba Corp,Toshiba Nanoanalysis Corp,東芝ナノアナリシス株式会社,株式会社東芝
- 优先权： JP2002380090 2002-12-27
- 主分类号： H01L21/316
- IPC分类号： H01L21/316 ; H01L29/78
摘要：
PROBLEM TO BE SOLVED: To provide a semiconductor device along with its manufacturing method, where the electric characteristics of an insulating film such as a gate oxide film is improved by introducing deuterium atoms of high binding energy into a film at high concentration.
SOLUTION: The method of manufacturing the semiconductor device includes a process for oxidizing the surface of a semiconductor in an oxidizing atmosphere. The oxidizing atmosphere contains the gas molecule composed of deuterium atoms, the gas molecule containing deuterium atoms and oxygen atoms, and the gas molecule containing oxygen atoms. The concentration of the gas molecule composed of the deuterium atoms is 0.01 molecule % or higher against the gas molecule containing the deuterium atoms and oxygen atoms.
COPYRIGHT: (C)2004,JPO&NCIPI
SOLUTION: The method of manufacturing the semiconductor device includes a process for oxidizing the surface of a semiconductor in an oxidizing atmosphere. The oxidizing atmosphere contains the gas molecule composed of deuterium atoms, the gas molecule containing deuterium atoms and oxygen atoms, and the gas molecule containing oxygen atoms. The concentration of the gas molecule composed of the deuterium atoms is 0.01 molecule % or higher against the gas molecule containing the deuterium atoms and oxygen atoms.
COPYRIGHT: (C)2004,JPO&NCIPI
公开/授权文献
- JP4125952B2 A method of manufacturing a semiconductor device 公开/授权日：2008-07-30
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