- 专利标题: New sulfonyl diazomethane compound, photo-acid generator, resist material using the same, and method for pattern formation
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申请号: JP2003035055申请日: 2003-02-13
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公开(公告)号: JP2004244358A公开(公告)日: 2004-09-02
- 发明人: OSAWA YOICHI , KOBAYASHI KATSUHIRO , YANAGI YOSHIAKI , MAEDA KAZUNORI
- 申请人: Shin Etsu Chem Co Ltd , 信越化学工業株式会社
- 专利权人: Shin Etsu Chem Co Ltd,信越化学工業株式会社
- 当前专利权人: Shin Etsu Chem Co Ltd,信越化学工業株式会社
- 优先权: JP2003035055 2003-02-13
- 主分类号: G03F7/004
- IPC分类号: G03F7/004 ; C07C245/16 ; C07C317/28 ; C08F12/24 ; C09K3/00 ; G03F7/039 ; G03F7/30 ; H01L21/027
摘要:
PROBLEM TO BE SOLVED: To obtain a sulfonyl diazomethane compound suitable as a photo-acid generator for chemical amplification-type resist materials, or the like, for making integrated circuits sensitive to radiations including ultraviolet radiation, far-ultraviolet radiation, electron beams, X-rays, excimer laser, γ-rays and synchrotron radiation, to obtain such a photo-acid generator, to obtain such a resist material containing the sulfonyl diazomethane compound, and to provide a method for pattern formation using the resist material. SOLUTION: The sulfonyl diazomethane compound is represented by formula(1)( wherein, R is H or a 1-4C alkyl or alkoxy; G is SO 2 or CO; R 3 is a 1-10C alkyl or 6-14C aryl; (p) is 1 or 2, and (q) is 0 or 1, wherein p+q=2; (n) is 2 or 3; (n') is 0 or 1; (m) is an integer of 3-11; and (k) is an integer of 0-4 ). COPYRIGHT: (C)2004,JPO&NCIPI
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