Invention Patent
JP2013211587A CLEAVED FACET (Ga,Al,In)N EDGE-EMITTING LASER DIODES GROWN ON SEMIPOLAR {11-2N} BULK GALLIUM NITRIDE SUBSTRATES
审中-公开
清漆面（Ga，Al，In）N边缘发射激光二极管在二极管{11-2N}大块氮化镓衬底
- Patent Title: CLEAVED FACET (Ga,Al,In)N EDGE-EMITTING LASER DIODES GROWN ON SEMIPOLAR {11-2N} BULK GALLIUM NITRIDE SUBSTRATES
- Patent Title (中): 清漆面（Ga，Al，In）N边缘发射激光二极管在二极管{11-2N}大块氮化镓衬底
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Application No.: JP2013120503Application Date: 2013-06-07
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Publication No.: JP2013211587APublication Date: 2013-10-10
- Inventor: NAKAMURA SHUJI , SPECK JAMES S , STEVEN P DENBAARS , ANURAG TYAGI
- Applicant: Regents Of The Univ Of California , ザ リージェンツ オブ ザ ユニバーシティ オブ カリフォルニア
- Assignee: Regents Of The Univ Of California,ザ リージェンツ オブ ザ ユニバーシティ オブ カリフォルニア
- Current Assignee: Regents Of The Univ Of California,ザ リージェンツ オブ ザ ユニバーシティ オブ カリフォルニア
- Priority: US88951807 2007-02-12
- Main IPC: H01S5/343
- IPC: H01S5/343
Abstract:
PROBLEM TO BE SOLVED: To provide cleaved facet (Ga,Al,In)N edge-emitting laser diodes grown on semipolar {11-2n} bulk gallium nitride substrates.SOLUTION: A III-nitride edge-emitting laser diode 10 is formed on a surface of a III-nitride substrate 12 having a semipolar orientation. The III-nitride substrate 12 is cleaved by creating a cleavage line along a direction substantially perpendicular to a nonpolar orientation of the III-nitride substrate 12, and then applying force along the cleavage line to create one or more cleaved facets 36 of the III-nitride substrate 12, where the cleaved facets 36 have an m-plane or α-plane orientation.
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