Invention Patent
- Patent Title: The semiconductor light-emitting device based on the crystal structure relaxation
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Application No.: JP2013537226Application Date: 2011-10-20
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Publication No.: JP2013545307APublication Date: 2013-12-19
- Inventor: リュドルフ バルケネンデ,アブラハム , アントニユス フェルスフーレン,マルキュス , イミンク,ヘオルヘ
- Applicant: コーニンクレッカ フィリップス エヌ ヴェ
- Assignee: コーニンクレッカ フィリップス エヌ ヴェ
- Current Assignee: コーニンクレッカ フィリップス エヌ ヴェ
- Priority: EP10189976 2010-11-04
- Main IPC: H01L33/08
- IPC: H01L33/08 ; H01L33/04 ; H01L33/32 ; H01S5/343 ; H01S5/42
Abstract:
The present invention discloses a method for manufacturing a solid state light emitting device having a plurality of light-sources, the method comprising the steps of: providing a substrate having a growth surface; providing a mask layer on the growth surface, the mask layer having a plurality of openings through which the growth surface is exposed, wherein a largest lateral dimension of each of said openings is less than 0.3 mum and wherein the mask layer may comprise a first mask layer portion and a second mask layer portion, having the same surface area and comprising a plurality of openings wherein the first mask layer portion exhibits a first ratio between an exposed area of the growth surface and an unexposed area of the growth surface, and wherein the second mask layer portion exhibits a second ratio between an exposed area of the growth surface and an unexposed area of said growth surface, the second ratio being different from the first ratio; growing a base structure on the growth surface in each of the openings of the mask layer; and growing at least one light-generating quantum well layer on the surface of each of the base structures.
Public/Granted literature
- JP5932817B2 結晶緩和構造に基づく半導体発光デバイス Public/Granted day:2016-06-08
Information query
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