Optoelectronic device (10) includes a first substrate having a first surface (14) and a second surface (16) (12), a lower layer (18) positioned on a second surface (16), a lower layer (18) a first conductive layer on (20), a first conductive layer (20) on the upper layer (22), the semiconductor layer on the first conductive layer (20) and (24), the semiconductor includes a second conductive layer on the layer (24) and (26), the. The first conductive layer (20) comprises a conductive oxide, tungsten, molybdenum, and at least one dopant selected from the group consisting of niobium and fluorine, and / or the upper layer (22), tin oxide comprising the zinc, indium, a buffer layer including at least one material selected from the group consisting of gallium and magnesium (42).
.FIELD 1