堆叠的半导体装置2包括其中设置所述第一壁部17直立，以包围第一电极11，并且在一个表面10a上的第一电极的第一基板10上设置，所述第一 并且其中设置在第二壁部27立设，以包围第二电极21，和第二电极的表面20a上的第二基板20，第一基板和第二基板 由面对所述一个表面和所述第一表面，其中与所述第一电极和所述第二电极，并且所述第一壁部的前端部的第一壁部的第一竖立连接 被设置在第二壁部的前端的第二壁部被竖立设置在被连接在所述第一壁部分的整个圆周，的状态的所述第一基板和所述第二基板之间 在第一壁部的外侧和所述第二壁部分，所述密封构件30被填充在所述第一壁部分的整个圆周上。

Stacked semiconductor device 2 includes a first substrate 10 having a first wall portion 17 provided upright so as to surround the first electrode 11, and a first electrode on one surface 10a is provided, the first and a second substrate 20 where the second wall portion 27 to the surface 20a erected so as to surround the second electrode 21, and the second electrodes are provided, a first substrate and a second substrate It is made to face the one surface and the first surface, along with to connect a first electrode and a second electrode, and the distal end portion where the first wall portion of the first wall portion is erected first is disposed a tip second wall portion of the second wall portion is erected on a state of being connected over the entire circumference of the first wall portion, it is between the first substrate and the second substrate on the outside of the first wall portion and the second wall portion, the sealing member 30 is filled over the entire circumference of the first wall portion.