The invention has to do with how to partially clean the ion source components of an ion implantation apparatus used in semiconductor and microelectronic fabrication. Ion source component comprises at least one component contained within the ionization chamber and the ionization chamber. One or more of the components included in the interior of the ionization chamber and / or the ionization chamber has at least a portion of deposition of the components contained therein over the dopant gas, such as borane carbonyl _{(C 2 B 10 H 12)} . The method is for the deposition and cleaning gas reaction under conditions sufficient to remove at least some of the deposition material from the one or more components contained in the step and ionization inwardly from and / or the ionization chamber of the chamber for introducing a cleaning gas for into the ionization chamber, and a step of. Gas for cleaning, F _2, noble gas and / or mixture of at least one inert gas and optionally an O ₂ selected from nitrogen or oxygen / fluorine-mixtures containing gas and a noble gas and / or at least one inert gas selected from nitrogen. Deposition thereby had an adverse effect on the normal operation of the ion implanter reduce the generation and use of the device frequent downtime.