发明公开
- 专利标题： 고결정성 유전체 물질의 제조방법
- 专利标题（英）： Manufacturing method for dielectrics with high tetragonality
- 专利标题（中）： 具有高三角形电介质的制造方法
-
申请号： KR1020120138314申请日： 2012-11-30
-
公开(公告)号： KR1020140072328A公开(公告)日： 2014-06-13
- 发明人: 정원식 , 차경진 , 김현 , 최연규 , 박지호
- 申请人： 삼성전기주식회사
- 申请人地址： Maeyoung-Ro *** (Maetan-Dong), Youngtong-Gu, Suwon-Si, Gyeonggi-Do, Republic of Korea
- 专利权人： 삼성전기주식회사
- 当前专利权人： 삼성전기주식회사
- 当前专利权人地址： Maeyoung-Ro *** (Maetan-Dong), Youngtong-Gu, Suwon-Si, Gyeonggi-Do, Republic of Korea
- 代理商 특허법인씨엔에스
- 主分类号： H01B3/10
- IPC分类号： H01B3/10 ; H01B13/00 ; H01B3/00 ; C04B35/468 ; C04B35/64 ; H01B1/22 ; H01B1/24 ; H01B3/28
摘要：
The present invention relates to a method for manufacturing dielectrics with high crystallinity. The present invention includes a step of supplying a dielectric precursor material to a sagger, a step of rotating the sagger, and a step of calcining the dielectric precursor material. According to the present invention, homogeneous dielectrics with high crystallinity can be obtained. Moreover, space limitation can be reduced by applying a rotational movement instead of a translational movement to the sagger, thereby improving economic efficiency.
公开/授权文献
- KR101719840B1 고결정성 유전체 물질의 제조방법 公开/授权日：2017-03-27
信息查询
